optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 1 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series description: each diode in this series is molded into an end-looking plastic package. the package for all OP168F and op268f devices is black, whereas the package for all op169 and op269 packages is clear. OP168F and op169 devices are gaas. op268f and op269 devices are gaaias. the op268fps is an 850nm gallium aluminum arsenide infrared emitting diode molded in a end-looking miniature plastic package. the advantage of this emitter is that it emits photons from a 0.004? area that is aligned with the package optical centerline. unlike other gaalas emitters, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in a variety of applications. due to their small size, all diodes in this series offer considerable design flexibility. the OP168F and op268f series are mechanically and sp ectrally matched to the op508f series phototransistor and the op538f series photodarlingtons. the op169 and op269 series are mechanically and spectrally matched to the op509 series phototransistors. please refer to application bulletins 208 and 210 for additional design information and reliability (degradation) data. for custom screening contact your optek representative. features: ? flat lens for wide radiation angle (op168, op268) ? integral lens for narrow beam angle (op169, op269) ? easily stackable on 0.100? (2.54 mm) hole centers ? mechanically and spectrally matched to other optek devices applications: ? space-limited applications ? excellent design flexibility ? pcboard mounted slotted switch ? pcboard interrupter ordering information part number led peak wavelength total beam angle lead length OP168Fa 935 nm 104 0.50" OP168Fb OP168Fc op169a 935 nm 18 op169b op169c op268fa 890 nm op268fb op268fc op268fps 850 nm 50 op269a 890 nm 18? op269b op269c 104 op168 op268 op169 op269 rohs
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 2 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series op169 (a, b, c), op269 (a, b, c) OP168F (a, b, c), op268f (a, b, c, ps) 1 2 1 2 pin # led x=0.060? (1.5 mm) 1 anode 2 cathode pin # led x=0.060? (1.5 mm) 1 anode 2 cathode inches [millimeters] dimensions are in: inches [millimeters] dimensions are in:
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 3 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series absolute maximum ratings (t a =25c unless otherwise noted) storage and operating te mperature range -40 o c to +100 o c reverse voltage 2.0 v continuous forward current 50 ma peak forward current (1 s pulse width, 300 pps) op168, op169, op268, op269 (a, b, c) op268fps 3.0 a 100 ma lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] (1) 260 c power dissipation (2) 100 mw notes: 1. rma flux is recommended. duration can be extended to 10 seconds maximum when flow soldering. a maximum of 20 grams force may be applied to the leads when soldering. 2. derate linearly 1.33 mw/ c above 25 c. 3. for op168 (fa, fb, fc) and op268 (fa, fb, fc), e e(apt) is a measurement of the average ape rtured radiant energy incident upon a sensing area 0.081? (2.06 mm) in diameter perpendicular to and c entered on the mechanical axis of the lens and 0.400? (10.16 mm ) from the measurement surface. for op169 (a, b, c) and op269 (a, b, c), e e(apt) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180? (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the le ns and 0.653? (16.6 mm) from the lens tip. note: e e(apt) is a measurement of the average radiant intensity within the cone formed by the above conditions. e e(apt) is not necessarily uniform within the measured area. electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions input diode e e (apt) (3) apertured radiant incidence OP168Fa OP168Fb OP168Fc op169a op169b op169c op268fa op268fb op268fc op268fps op269a op269b op269c 0.48 0.43 0.27 0.18 0.11 0.03 0.64 0.45 0.36 0.10 0.58 0.42 0.34 - - - - - - - - - - - - - - - - 0.73 - - 0.22 - - 0.99 - 0.90 - 0.82 - mw/cm 2 i f = 20 ma aperture = .081? dia. distance = .400? from tip of lens to aperture surface v f forward voltage op168, op169 op268, op269 op268fps - - - - - - 1.40 1.50 1.80 v i f = 20 ma i r reverse current op168, op169, op268, op269 op268fps - - - - 100 20 a v r = 2.0 v p wavelength at peak emission op168, op169 op268, op269 op268fps - - - 935 890 850 - - - nm i f = 20 ma
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 4 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series electrical characteristics (t a = 25 c unless otherwise noted ? for reference only) symbol parameter min typ max units test conditions input diode b spectral bandwidth between half power points op168, op169, op268fps op268, op269 - - 50 80 - - nm i f = 10 ma ? p / ? t spectral shift with temperature op168, op169, op268, op269 - - 0.30 0.18 - - nm/c i f = constant hp emission angle at half power points op168 op169 op268 op268fps op269 - - - - - 104 46 104 50 46 - - - - - degree i f = 20 ma t r rise time op168, op169 op268, op269 op268fps - - - 1000 500 10 - - - ns i f(pk) =100 ma, pw=10 s, d.c.=10% t f fall time op168, op169 op268, op269 op268fps - - - 500 250 10 - - - ns i f(pk) =100 ma, pw=10 s, d.c.=10% relative radiant intensity vs. angular displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 angular displacement (degrees) relative radiant intensity beam angle op268fa - op268fc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -80 -60 -40 -20 0 20 40 60 80 angle (degrees) amplitude beam angle op168 & op268 package beam angle op169 & op269 package
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 5 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series op168 (fa, fb, fc), op169 (a, b, c) distance vs output power vs forward current 0 1 2 3 4 5 6 7 8 9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma normalized at 0.6" and 50 ma forward current forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 forward current (ma) typical forward voltage (v) -65c -40c -20c +0c +20c +40c +60c +80c +100c +125c optical power vs i f vs temp 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 50 forward current i f (ma) normalized optical power -65c -40c -20c +0c +20c +40c +60c +80c +100c +125c normalized at 20 ma and 20 o c
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/07 page 6 of 6 plastic infrared emitting diode OP168F, op169, op268f, op269 series op268 (fa, fb, fc, fps), op269 (a, b, c) forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 102030405060708090100 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c optical power vs i f vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 102030405060708090100 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c distance vs output power vs forward current 0 1 2 3 4 5 6 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma 90 ma 100 ma normalized at 1" and 50 m a forward current
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